Characterized doped germanium semiconductor samples by dominant charge type using Hall voltage data obtained from varying current, temperature, and magnetic field strength. Validated sign of Hall voltage by calculating conductivity and mobility for comparison with expected charge carrier behaviors. Conductivity (σ) and temperature (T) data was plotted as ln(σ) vs 1/T and related to the Arrhenius equation, determining the band gap energy of the intrinsic sample to be 0.75 eV at 300K: within 12% of the expected energy at this temperature.